TN0200K-T1-E3【PDF 2/5 页】MOSFET N-CH 20V 730MA SOT23-3

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TN0200K

Vishay Siliconix

SPECIFICATIONS T A = 25 °C, unless otherwise noted

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

V (BR)DSS

V GS(th)

V GS = 0 V, I D = 10 μA

V DS = V GS , I D = 50 μA

20

0.45

0.6

1.0

V

Gate-Body Leakage

I GSS

V DS = 0 V, V GS = ± 4.5 V

±5

Zero Gate Voltage Drain Current

On-State Drain Current a

I DSS

I D(on)

V DS = 20 V, V GS = 0 V

T J = 55 °C

V DS ≥ 5 V, V GS = 4.5 V

V DS ≥ 5 V, V GS = 2.5 V

2.5

1.5

0.1

10

μA

A

Drain-Source On-Resistance a

Forward Transconductance a

r DS(on)

g fs

V GS = 4.5 V, I D = 0.6 A

V GS = 2.5 V, I D = 0.6 A

V DS = 5 V, I D = 0.6 A

0.2

0.25

2.2

0.4

0.5

Ω

S

Diode Forward

Voltage a

V SD

I S = 0.3 A, V GS = 0 V

0.8

1.2

V

Dynamic b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall TIme

Q g

Q gs

Q gd

R g

t d(on)

t r

t d(off)

t f

V DS = 10 V, V GS = 4.5 V

I D = 0.6 A

V DD = 10 V, R L = 16 Ω

I D ? 0.6 A, V GEN = 4.5 V

R g = 6 Ω

1400

190

300

105

17

20

55

30

2000

25

30

85

45

pC

Ω

ns

Notes:

a. Pulse test: PW ≤ 300 μs duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

4.0

V GS = 5 thru 2.5 V

4

T J = - 55 °C

3.2

3

2.4

1.6

2V

2

25 °C

125 °C

0.8

0.0

1.5 V

1V

1

0

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

www.vishay.com

2

V DS – Drain-to-Source Voltage (V)

Output Characteristics

V GS – Gate-to-Source Voltage (V)

Transfer Characteristics

Document Number: 72678

S-71198–Rev. B, 18-Jun-07

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